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Samsung - DDR2 - module - 4 GB - FB-DIMM 240-pin - 667 MHz / PC2-5300 - CL5 - 1.8 V - Fully Buffered - ECC - Refurb

Samsung - DDR2 - module - 4 GB - FB-DIMM 240-pin - 667 MHz / PC2-5300 - CL5 - 1.8 V - Fully Buffered - ECC M395T5160QZ4-CE65-REF

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Samsung
HerstellerSamsungArtikelnummer
M395T5160QZ4-CE65-REF
  • 240 pin fully buffered dual in-line memory module (FBDIMM)
  • 3.2 Gb/s, 4.0 Gb/s link transfer rate
  • Buffer interface with high-speed differential point-to-point link at 1.5 Volt
  • Channel error detection and reporting
  • Channel Failover mode support
  • Serial presence detect with EEPROM
  • 8 banks
  • Posted CAS
  • Programmable CAS latency - 3, 4, 5, 6
  • Programmable additive latency - 0, 1, 2, 3, 4, 5
  • Automatic DDR2 DRAM bus and channel calibration
  • MBIST and IBIST Test functions
  • Hot add-on and Hot Remove capability
  • Transparent mode for DRAM test support